High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

标题
High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
作者
关键词
-
出版物
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 50, Issue 5, Pages 354-363
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-02-12
DOI
10.1109/jqe.2014.2304460

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