☆ 4.6 Article

V-TH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress

IEEE ELECTRON DEVICE LETTERS (2018)

期刊

IEEE ELECTRON DEVICE LETTERS

卷 39, 期 10, 页码 1576-1579

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/LED.2018.2867938

关键词

Dynamic gate stress; p-GaN; PBTI; Schottky gate contact; threshold voltage shift

类别

Engineering, Electrical & Electronic

资金

Guangdong Science and Technology Department [2017B010113002]
Ministry of Science and Technology of the People's Republic of China [2017YFB0403002]
Hong Kong ITF [ITS/412/17FP]

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Reagent

摘要

The impacts of static and dynamic gate stress on the threshold voltage (V-TH) instability in Schottky-type p-GaN gate AIGaN/GaN heterojunction field-effect transistors are experimentally investigated. V(TH )shifts negatively under large positive bias static stress (V-G_stress > 5 V) by adopting conventional quasi-static characterization techniques. In contrast, V-TH under fast-dynamic-stress exhibits positive shift, and a positive frequency dependence occurs within a wide range of frequency from 10 Hz to 1 MHz. The different V-TH instability behavior under static and dynamic stress mainly originates from the time-dependent charges (electrons and holes) storage/release mechanisms in the p-GaN layer, which is floating in the Schottky-type p-GaN gate HEMT.

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