High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

标题
High Mobility Bilayer Metal–Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 87-89
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-01-04
DOI
10.1109/led.2013.2290707

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search