期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 1, 页码 123-125出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2224633
关键词
Polyimide (PI); resistive random access memory (ReRAM) devices; sol-gel
资金
- National Science Council of Taiwan [NSC 98-2221-E-035-082-MY3]
In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 10(5)) and superior endurance (> 10(5) cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.
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