Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method

标题
Mean Barrier Height and Richardson Constant for Pd/ZnO Thin Film-Based Schottky Diodes Grown on n-Si Substrates by Thermal Evaporation Method
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 10, Pages 1238-1240
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-09-11
DOI
10.1109/led.2013.2278738

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