Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High $f_{\rm MAX}/f_{T}$ Ratio

标题
Multifinger Embedded T-Shaped Gate Graphene RF Transistors With High $f_{\rm MAX}/f_{T}$ Ratio
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 10, Pages 1340-1342
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-09-24
DOI
10.1109/led.2013.2276038

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