4.6 Article

High-Mobility Solution-Processed Amorphous Indium Zinc Oxide/In2O3 Nanocrystal Hybrid Thin-Film Transistor

期刊

IEEE ELECTRON DEVICE LETTERS
卷 34, 期 1, 页码 72-74

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2226425

关键词

Indium zinc oxide (IZO); low temperature; solution processing; thin-film transistors (TFTs)

资金

  1. Ministry of Education of China [NCET-10-0643]
  2. National Natural Science Foundation of China [11104207, 61222402, 91123009, 10975109]
  3. Hubei Province Natural Science Foundation [2011CDB271]
  4. Jiangsu Province Natural Science Foundation [BK2011348]
  5. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
  6. Fundamental Research Funds for the Central Universities [2012202020214]

向作者/读者索取更多资源

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm(2) . V-1 . s(-1) and an on-off ratio of 107, which were obtained at 1 mol% In2O3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.

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