期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 6, 页码 801-803出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2257660
关键词
Organic FETs; pressure sensor; thin-film devices; ultralow voltage devices
资金
- Sardinia Regional Government
A novel structure for the fabrication of organic pressure sensors is presented. It is based on a polydimethylsiloxane capacitor integrated with a floating-gate organic field-effect transistor (OFET) able to operate at ultralow voltages. The thin-film device, fabricated on a flexible substrate, is specifically conceived for tactile sensing. The main novelty of the working principle consists in the physical separation between the pressure-sensitive area and the active area of the OFET. The complete characterization of the device, in response to the application of different pressures, is provided.
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