4.6 Article

Ultralow Voltage Pressure Sensors Based on Organic FETs and Compressible Capacitors

期刊

IEEE ELECTRON DEVICE LETTERS
卷 34, 期 6, 页码 801-803

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2257660

关键词

Organic FETs; pressure sensor; thin-film devices; ultralow voltage devices

资金

  1. Sardinia Regional Government

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A novel structure for the fabrication of organic pressure sensors is presented. It is based on a polydimethylsiloxane capacitor integrated with a floating-gate organic field-effect transistor (OFET) able to operate at ultralow voltages. The thin-film device, fabricated on a flexible substrate, is specifically conceived for tactile sensing. The main novelty of the working principle consists in the physical separation between the pressure-sensitive area and the active area of the OFET. The complete characterization of the device, in response to the application of different pressures, is provided.

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