Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz - Peeref

标题

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

作者

关键词

-

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 34, Issue 6, Pages 741-743

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2013-05-22

DOI

10.1109/led.2013.2257657

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

© Peeref 2019-2024. All rights reserved.