Article
Engineering, Electrical & Electronic
Minghao He, Kangyao Wen, Chenkai Deng, Mujun Li, Yifan Cui, Qing Wang, Hongyu Yu, Kah-Wee Ang
Summary: In this study, a normally-OFF β-Ga2O3 MOSFET with a charge trapping layer (CTL) was demonstrated for the first time. The CTL consists of Al:HfOx 1:5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibited a wide Vth tuning range for normally-OFF operation and a long-lasting retention characteristic (-0.3 V for ten years). The device showed a breakdown voltage (BV) of 1815 V, indicating high reverse blocking capability based on the proposed CTL technique.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Sin-En Li, Guan-Zhang Lu, Ji-Lin Shen, Meng-Jer Wu, Yu-Ting Chen, Mujahid Mustaqeem, Yang-Fang Chen
Summary: This study presents a first attempt to achieve multifunctional nonvolatile memory based on all 2D heterostructures, demonstrating long-term stability and nonvolatile characteristics under both optical and electrical control signals.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Jaemin Kim, Jaeun Kim, Eun-Chel Cho, Junsin Yi
Summary: The study reports an improvement in charge storage characteristics in a non-volatile memory (NVM) device using an ultraviolet-treated hafnium oxide layer. Analysis of Hf 4f and O 1s peaks through X-ray photoelectron spectroscopy was conducted, revealing defect densities after UV treatment. The memory device showed enhanced memory storage characteristics and charge retention, indicating the potential of high-efficiency TFT NVM devices using high-K materials.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
Rino Kawashima, Hiroshi Nohira, Ryousuke Ishikawa, Yuichiro Mitani
Summary: Graphene can be transformed into a highly insulating thin film by fluorination treatment, making it suitable for use as a charge trapping layer in nonvolatile memory. This study analyzed fluorographene using X-ray photoelectron spectroscopy and Raman spectroscopy, and evaluated its electrical performance in metal-insulator-semiconductor (MIS) capacitors. The results showed that even when the fluorine concentration reached 14%, a large flat-band voltage shift was observed. The charge centroid of the MIS capacitor coincided with the location of the fluorographene, indicating its ability to capture injected charges.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Dencho Spassov, Albena Paskaleva, Elzbieta Guziewicz, Wojciech Wozniak, Todor Stanchev, Tsvetan Ivanov, Joanna Wojewoda-Budka, Marta Janusz-Skuza
Summary: This work investigates the application of metal/blocking oxide/high-k charge trapping layer/tunnel oxide/Si (MOHOS) structures as memory cells in charge trapping flash memories. The study focuses on the influence of post-deposition oxygen annealing and the type and thickness of tunneling oxide on memory characteristics. Results show that post-deposition oxygen annealing and tunneling oxide play a significant role in charge trapping and retention properties. Rapid thermal annealing in O-2 enhances the electron trapping and memory window, but deteriorates the retention properties. Furthermore, O-2 annealing also improves the endurance of the stacks.
Article
Physics, Applied
Puhao Chai, Jun Zhu, Jiale Chen
Summary: A charge trapping memory with high-k nanocrystal-amorphous phase structure was fabricated. Numerous charge traps were generated at the phase interface, significantly increasing the charge trapping capability. The device demonstrated a larger memory window and excellent stability.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: This study investigates a new type of charge-trapping nonvolatile memory (NVM) that has the same structure as a thin-film transistor (TFT). The NVM uses metal-hydroxyl (M-OH) defects in the back channel for charge storage. Devices with different M-OH content were prepared by changing thermal treatment. The high M-OH content device shows good NVM performance, while the low M-OH content device exhibits good TFT characteristics.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Applied
Chaoyue Zheng, Yihong Huan, Chao Tan, Deqing Gao
Summary: This study investigated the impact of a series of interface materials on the storage performance of nonvolatile organic field-effect transistor memory devices, revealing that the addition of lone-pair-electron atoms (N, O) between the pyridyl group and the propyl chain can enhance storage performance.
Article
Chemistry, Analytical
Young Suh Song, Byung-Gook Park
Summary: The use of aluminum oxide as a tunneling layer in NOR flash array significantly improves retention characteristics, demonstrating a higher threshold voltage window compared to other structures. The proposed device structure shows potential for successful application in NOR flash memory, with the possibility of utilizing HfO2 as a charge-trapping layer.
Article
Engineering, Electrical & Electronic
Tao Chen, Zheyang Zheng, Sirui Feng, Li Zhang, Kevin J. Chen
Summary: A GaN-based non-volatile memory device with improved endurance, fast programming speed, and long retention time is proposed in this study. The endurance is improved by using a less destructive programming scheme based on back gate injection and reducing the doping concentration of the p-channel. The device can withstand over 1010 program/erase cycles and requires a -10V/200ns pulse for programming without compromising the retention time.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Anze Mraz, Rok Venturini, Damjan Svetin, Vitomir Sever, Ian Aleksander Mihailovic, Igor Vaskivskyi, Bojan Ambrozic, Goran Drazic, Maria D'Antuono, Daniela Stornaiuolo, Francesco Tafuri, Dimitrios Kazazis, Jan Ravnik, Yasin Ekinci, Dragan Mihailovic
Summary: Current trends in data processing have led to a search for new concepts of memory devices that prioritize efficiency, speed, and scalability. A promising new approach based on resistance switching in 1T-TaS2 has been investigated. The research explores the energy efficiency scaling of charge configuration memory (CCM) devices in relation to device size, data write time (tau(W)), and other parameters. The study finds that energy efficiency scales linearly with device size and data write time, only deviating from linearity when tau(W) approaches the intrinsic switching limit. CCM devices are shown to be faster and more energy efficient compared to current memory devices, utilizing 2.2 fJ, 16 ps electrical pulses for two-terminal switching.
Article
Engineering, Electrical & Electronic
Soobin Hwang, Jin-Su Oh, Taek Sun Jung, Dasol Kim, Hyeonwook Lim, Changwoo Lee, Cheol-Woong Yang, Jae Hoon Kim, Mann-Ho Cho
Summary: This study reports a significant increase in the thermal stability of C-incorporated Sb2Te3, making it a suitable material for PCM devices with high thermal stability. The thermal stability can be further enhanced by adjusting the C content, although some of the device operation characteristics are slightly degraded.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Dencho Spassov, Albena Paskaleva
Summary: The increasing demand for data storage requires research on new device concepts and technologies that can overcome the limitations of traditional CMOS-based memory cells. In the meantime, there are still innovations within the current CMOS technology that can improve the data storage ability of memory cells, such as using charge trapping memory instead of floating gate non-volatile memory. This work provides an overview of systematic studies on charge-trapping memory cells with a HfO2/Al2O3-based charge-trapping layer.
Article
Multidisciplinary Sciences
Xiaoshi Jin, Shouqiang Zhang, Meng Li, Xi Liu
Summary: The study proposes a single gate controlled nonvolatile floating program gate (FPG) reconfigurable field effect transistor (RFET). It introduces a nonvolatile charge storage layer as an FPG instead of a program gate that needs independent power supply. The stored charge in the FPG can be programmed by the control gate (CG). Therefore, only one independently powered gate is required to complete the reconfigurable operation. Moreover, the CG can regulate the equivalent voltage in the FPG, reducing static power consumption and reverse leakage current generation. The physical mechanism has also been analyzed in detail.
ADVANCED THEORY AND SIMULATIONS
(2023)
Article
Materials Science, Multidisciplinary
Eun Seo Jo, You Seung Rim
Summary: We conducted research to create reverse synapse plasticity using metal oxide semiconductor-based field-effect transistors. By adjusting the thickness of the Ga2O3 trapping layers, we examined changes in roughness and density and confirmed the variations and mechanisms of synaptic behaviors in relation to the properties of Ga2O3. The control of charge traps as functions of pulse time, input voltage, and initialization is crucial for achieving optimal device conditions.
MATERIALS TODAY PHYSICS
(2023)
Article
Chemistry, Analytical
Fei Zhang, Yuanzhi Cao, Qing-an Huang, Xiaodong Huang
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
(2019)
Article
Physics, Applied
Sheng Li Fang, Wei Hua Liu, Xin Li, Xiao Li Wang, Li Geng, Min Shun Wu, Xiao Dong Huang, Chuan Yu Han
APPLIED PHYSICS LETTERS
(2019)
Article
Chemistry, Multidisciplinary
Yuanzhi Cao, Tianzhao Bu, Chunlong Fang, Chao Zhang, Xiaodong Huang, Chi Zhang
ADVANCED FUNCTIONAL MATERIALS
(2020)
Article
Materials Science, Multidisciplinary
Jiaqi Song, Xiaodong Huang, Chuanyu Han, Yongqin Yu, Yantao Su, Puito Lai
Summary: The paragraph discusses the research status, manufacturing process, performance improvement methods, recent advances, and challenges of flexible InGaZnO thin-film transistors.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Chemistry, Analytical
Lei Han, Lijun Chen, Ruijie Qin, Kang Wang, Zhiqiang Zhang, Meng Nie, Xiaodong Huang
Article
Nanoscience & Nanotechnology
Ling-Xuan Qian, Zhiwen Gu, Xiaodong Huang, Hongyu Liu, Yuanjie Lv, Zhihong Feng, Wanli Zhang
Summary: This study presents a metal-semiconductor-metal photodetector with a beta-Ga2O3 homojunction structure achieved by low-energy surface fluorine plasma treatment for surface passivation. The fluorine dopants were used to passivate oxygen vacancies and suppress surface chemisorption, resulting in an improvement in both dark and photo current characteristics. The sensitivity was enhanced by nearly 1 order of magnitude, showcasing competitive comprehensive properties for beta-Ga2O3 solar-blind metal-semiconductor-metal photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: The study shows that post-metallization annealing treatment significantly influences the performance of dual-gate InGaZnO thin-film transistors, where the TiOx formed suppresses the effects of the top gate but also acts as detrimental deep-level acceptor-like traps. The untreated transistors showed good performance due to the suppression of TiOx and metal-hydroxyl traps.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Sheng Li Fang, Chuan Yu Han, Wei Hua Liu, Xin Li, Xiao Li Wang, Xiao Dong Huang, Jun Wan, Shi Quan Fan, Guo He Zhang, Li Geng
Summary: This work achieved multilevel resistive random access memories (RRAMs) with multiple stable resistance states, attributing the resistive switching mechanism to conductive filament and redox reaction. By utilizing RRAM, a tunable high-pass filter with configurable filtering characteristics was realized, demonstrating high resolution and wide programming range.
Article
Engineering, Electrical & Electronic
C. Zhang, D. Li, P. T. Lai, X. D. Huang
Summary: This study investigates a new type of charge-trapping nonvolatile memory (NVM) that has the same structure as a thin-film transistor (TFT). The NVM uses metal-hydroxyl (M-OH) defects in the back channel for charge storage. Devices with different M-OH content were prepared by changing thermal treatment. The high M-OH content device shows good NVM performance, while the low M-OH content device exhibits good TFT characteristics.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Ling-Xuan Qian, Wenqi Li, Zhiwen Gu, Jing Tian, Xiaodong Huang, Peter To Lai, Wanli Zhang
Summary: In this study, well-defined Al@AlO3 core-shell nanostructure arrays with sub-50 nm feature sizes, narrow dimension distributions, periodic graphene-like patterns, and extremely high densities up to 152.7 counts µm(-2) were fabricated. The beta-Ga2O3 PDs decorated with these nanostructures showed significantly enhanced sensitivities without response spectra broadening. Finite-difference time-domain simulations based on isolated, dimer, and arrayed models confirmed the presence of LSPR and the critical contribution of nanostructure density.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Chemistry, Physical
Fan Yue, Qiuying Xia, Yang Gong, Mingyang Wang, Hui Xia, Xiaodong Huang
Summary: A fully coupled electrochemical-mechanical-thermal model was established to investigate the behavior of all-solid-state thin-film Li-ion batteries at low temperatures. It was found that mass-transfer overpotential across the electrolyte and charge-transfer overpotential at the cathode/electrolyte interface are key factors affecting battery performance.
JOURNAL OF POWER SOURCES
(2022)
Article
Electrochemistry
Fei Zhang, Xinyi He, Fan Yue, Jian Wang, Zhiqiang Zhang, Qing-an Huang, Xiaodong Huang
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2020)
Proceedings Paper
Computer Science, Hardware & Architecture
F. Zhang, Y. Z. Cao, X. X. He, F. Li, J. J. Shi, Q. A. Huang, X. D. Huang
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
(2019)
Article
Chemistry, Physical
Fan Li, Jun Liu, Yao Ma, Zhenzhen Shang, Qing-an Huang, Xiaodong Huang
JOURNAL OF MATERIALS CHEMISTRY A
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
X. H. Dong, X. D. Huang
