High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

出版年份 2013 全文链接

标题

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

作者

关键词

-

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 34, Issue 3, Pages 366-368

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2013-01-15

DOI

10.1109/led.2012.2236638

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