Low Specific Contact Resistance of Gallium Zinc Oxide Prepared by Atomic Layer Deposition Contact on ${\rm p}^{+}\hbox{-}{\rm GaAs}$ for High-Speed Near-Infrared Light-Emitting Diode Applications
Low Specific Contact Resistance of Gallium Zinc Oxide Prepared by Atomic Layer Deposition Contact on ${\rm p}^{+}\hbox{-}{\rm GaAs}$ for High-Speed Near-Infrared Light-Emitting Diode Applications
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