期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 10, 页码 1250-1252出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2279009
关键词
Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM)
资金
- Research and Development program of the Ministry of Knowledge Economy
- Pioneer Research Center Program through the National Research Foundation of Korea
- Ministry of Education, Science and Technology [2012-0009460]
To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.
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