Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

出版年份 2013 全文链接

标题

作者

关键词

出版物

Volume 34, Issue 7, Pages 894-896

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2013-06-01

DOI

10.1109/led.2013.2259574

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