High-Performance InAs Nanowire MOSFETs

In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-kappa process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm(2) (V-D = 0.5 V). For a nominal L-G = 100 nm, we observe an extrinsic transconductance (g(m)) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at V-D = 10 mV.