Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors

We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm(2) . V-1 . s(-1) and on the order of 10(8), respectively, before thermal annealing and 3.02 cm(2) . V-1 . s(-1) and on the order of 10(10), respectively, after thermal annealing at 150 degrees C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O.