期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 10, 页码 1372-1374出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2204855
关键词
AlGaN/GaN on Si; high-electron-mobility transistors (HEMTs); large signal; load-pull characterization
We report a new generation of high-performance AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity Si (111) substrates. We map out small-and large-signal device performances against technological parameters such as the gate length and the source-drain contact separation. We report the first large-signal performance for a GaN-on-Si technology offering an output power of 2W/mm and an associated peak power-added efficiency of 13.8% (peak of 18.5%) at 40 GHz without any field plate. The technology offers measured transconductances of up to 540 mS/mm and cutoff frequencies as high as f(T)/f(MAX) = 152/149 GHz at a given bias point. These are the highest cutoff frequencies to date for fully passivated AlGaN/GaN HEMTs on silicon substrates. The results confirm GaN-on-Si technology as a promising contender for low-cost millimeter-wave power electronic applications.
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