Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure

Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In–Ga–Zn–O Channels

(2011) Lijie Shao et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure

(2011) Di Geng et al.   IEEE ELECTRON DEVICE LETTERS

Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

(2011) Edward Namkyu Cho et al.   MICROELECTRONICS RELIABILITY

The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

(2011) Jae Kyeong Jeong   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

(2010) Toshio Kamiya et al.   APPLIED PHYSICS LETTERS

Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors

(2010) A. Suresh et al.   IEEE ELECTRON DEVICE LETTERS

Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

(2009) Sangwook Kim et al.   IEEE ELECTRON DEVICE LETTERS

MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region

(2009) Jaewook Jeong et al.   Journal of Display Technology

Toward High-Performance Amorphous GIZO TFTs

(2009) P. Barquinha et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY