Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications

出版年份 2012 全文链接

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作者

关键词

出版物

Volume 33, Issue 5, Pages 706-708

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2012-03-20

DOI

10.1109/led.2012.2188775

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