Article
Engineering, Electrical & Electronic
Yu-Chia Chen, Po-Han Chen, Jay Shieh, Chih-Ting Lin
Summary: This study explores the mechanism of interface trap charge-induced low-k interfacial layer and verifies it through experimental methods. The experimental results indicate that different types of silicon substrates possess distinct interface properties. Substrates with the lowest interface trap density exhibit less low-k interfacial effect compared to other substrates.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Young Won Kim, Han Bit Lee, Jonghun Yoon, Suk-Hee Park
Summary: A high-performance triboelectric nanogenerator integrated with three-dimensional customized interfaces was developed. By combining a nanofiber-interfused tribo-surface with a charge-trapping layer, the output performance was significantly enhanced. The conformal 3D customized interface provided wear comfort and generated additional charge through friction. The generator demonstrated durability and sustained high output performance.
Article
Materials Science, Ceramics
Fang Ye, Jie Liang, Yuchen Cao, Qiang Song, Yupeng Sui, Zhiyuan Yang, Laifei Cheng
Summary: The hybridization of carbon nanotubes (CNTs) with Si3N4 to create CSCNT-Si3N4/Si3N4 composite ceramics allows for efficient microwave absorption with a very low filler loading, while also providing protection against oxidation for CNTs. This innovative approach demonstrates strong microwave absorption performance and long-term stability in high-temperature conditions.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Physical
Jingpeng Ren, Kaihua Ning, Haifen Liu, Zixuan Zhu, Weili Fan, Lixin Wang, Xiaohui Zhao, Shaopeng Yang
Summary: The addition of lithium fluoride as a double electron transport layer in organic solar cells effectively reduces the work function of the active layer, improves electron injection efficiency, promotes charge extraction and collection, and enhances the stability and efficiency of the device.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Chemistry, Physical
Yifeng Yao, Shiqi Li, Huixia Xu, Zhixiang Gao, Jingkun Ren, Yanxia Cui, Linfeng Cai, Furong Zhu, Yuying Hao
Summary: Efficient charge extraction at the cathode and anode interfaces remains a challenge for improving power conversion efficiency of semitransparent perovskite solar cells. This study explores enhancing PCE by incorporating energetically favorable cathode buffer layers and hole-transporting layers, achieving an average PCE of 13.53% and 9.92% with specific CBL and HTL combinations. High-performance semitransparent PSCs require efficient charge collection and high built-in potential across the photoactive layer via interfacial modifications.
MATERIALS TODAY ENERGY
(2021)
Article
Chemistry, Physical
Dencho Spassov, Albena Paskaleva, Elzbieta Guziewicz, Vojkan Davidovic, Srboljub Stankovic, Snezana Djoric-Veljkovic, Tzvetan Ivanov, Todor Stanchev, Ninoslav Stojadinovic
Summary: High-k dielectric stacks are being studied for their potential use in Charge Trapping Non-Volatile Memories, and the effects of gamma radiation on these stacks, in terms of electrical defects and charge accumulation, have been investigated. The results show that radiation can increase or decrease electrically active defects, and that different charge accumulation occurs in annealed stacks with oxygen versus nitrogen. Oxygen-treated stacks show increased memory windows and tolerance to radiation.
Article
Computer Science, Information Systems
Kyu-Jin Choi, Jae-Hyun Park, Seong-Kyun Kim, Byung-Sung Kim
Summary: This paper presents the design and performance characteristics of a K-band CMOS differential cascode power amplifier, utilizing thin-oxide and thick-oxide FETs to achieve high supply voltage and output power. The gain degradation caused by the low cut-off frequency of the thick-oxide FET is compensated by its high output resistance when the inter-stage node is neutralized, leading to a high saturated output power and efficiency at 24 GHz frequency in the fabricated chip using 65-nm LP CMOS technology.
Article
Materials Science, Multidisciplinary
Jaemin Kim, Jaeun Kim, Eun-Chel Cho, Junsin Yi
Summary: The study reports an improvement in charge storage characteristics in a non-volatile memory (NVM) device using an ultraviolet-treated hafnium oxide layer. Analysis of Hf 4f and O 1s peaks through X-ray photoelectron spectroscopy was conducted, revealing defect densities after UV treatment. The memory device showed enhanced memory storage characteristics and charge retention, indicating the potential of high-efficiency TFT NVM devices using high-K materials.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Physical
Feng Lv, Yanqing Yao, Cunyun Xu, Dingyu Liu, Liping Liao, Gang Wang, Guangdong Zhou, Xusheng Zhao, Debei Liu, Xiude Yang, Qunliang Song
Summary: This paper investigates the band bending at the ITO-perovskite interface for highly efficient perovskite solar cells. The results show that band bending can effectively prevent recombination of holes with electrons without the need for electron or hole transport layers.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Minghao He, Kangyao Wen, Chenkai Deng, Mujun Li, Yifan Cui, Qing Wang, Hongyu Yu, Kah-Wee Ang
Summary: In this study, a normally-OFF β-Ga2O3 MOSFET with a charge trapping layer (CTL) was demonstrated for the first time. The CTL consists of Al:HfOx 1:5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibited a wide Vth tuning range for normally-OFF operation and a long-lasting retention characteristic (-0.3 V for ten years). The device showed a breakdown voltage (BV) of 1815 V, indicating high reverse blocking capability based on the proposed CTL technique.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Chemistry, Multidisciplinary
Dencho Spassov, Albena Paskaleva
Summary: The increasing demand for data storage requires research on new device concepts and technologies that can overcome the limitations of traditional CMOS-based memory cells. In the meantime, there are still innovations within the current CMOS technology that can improve the data storage ability of memory cells, such as using charge trapping memory instead of floating gate non-volatile memory. This work provides an overview of systematic studies on charge-trapping memory cells with a HfO2/Al2O3-based charge-trapping layer.
Article
Chemistry, Physical
Yacun Zhang, Chongjian Zhang, Xiaochun Huang, Zhangqiang Yang, Kelvin H. L. Zhang, Ye Yang
Summary: The self-trapping of free carriers in transition-metal oxides can lead to small polarons, causing inadequate performance of oxide-based optoelectronic applications. Understanding the self-trapping mechanism is crucial for improving the performance of these applications. The study on Co3O4 epitaxial monocrystalline films using transient absorption spectroscopy revealed a barrierless self-trapping mechanism derived from the small polaron framework.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Physical
Kanchan Cecil, Jawar Singh, Dip Prakash Samajdar
Summary: A novel n-type raised source/drain dopingless tunnel field-effect transistor with improved dc characteristics, subthreshold characteristics, and high resistance to random dopant fluctuations is proposed. The device also features reduced fabrication complexity and achieves a high I-ON/I-OFF ratio and steep subthreshold swing without increasing leakage current.
Article
Engineering, Electrical & Electronic
Bartosz Tegowski, Alexander Koelpin
Summary: This letter presents a compact substrate-integrated waveguide (SIW) six-port junction with reduced occupied area by 40% compared to state-of-the-art implementations. The junction consists of E-plane power dividers, quadrature hybrid couplers, and a self-compensating quadrature phase shifter. Measurements confirm its functionality in the frequency range between 22 and 28 GHz.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Shizhen Zhi, Jibiao Li, Lipeng Hu, Junqin Li, Ning Li, Haijun Wu, Fusheng Liu, Chaohua Zhang, Weiqin Ao, Heping Xie, Xinbing Zhao, Stephen John Pennycook, Tiejun Zhu
Summary: Configurational entropy is a novel descriptor in the functional materials genome, allowing for the tuning of carrier mobility and lattice thermal conductivity in thermoelectric materials. Medium-entropy alloying can enhance the thermoelectric performance in GeTe materials by suppressing phase transitions and balancing carrier mobility.
