Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

(2010) Yuji Urabe et al.   APPLIED PHYSICS LETTERS

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE

Nanowire transistors without junctions

(2010) Jean-Pierre Colinge et al.   Nature Nanotechnology

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

(2009) Hiroyuki Ishii et al.   Applied Physics Express

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

(2009) Masafumi Yokoyama et al.   Applied Physics Express

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$ MOSFET

(2009) Y. Q. Wu et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

(2008) Y. Xuan et al.   IEEE ELECTRON DEVICE LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES