期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 10, 页码 1379-1381出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2163149
关键词
Gallium nitride; heterostructure; MOS device; multichannel; multivalued logic (MVL); quaternary logic
Bulk-Si CMOS technology has been consistently improving for over 40 years, following Moore's law, by gate length scaling. In this letter, we present a novel charge-based multistate transistor device on the AlGaN/GaN system which uses a given gate length but handles more than two states any time. This novel multichannel MOS device, having a higher processing capability than a binary transistor, is then used to implement multiple valued logic gates in a pull-down network scheme. In this letter, we use the results of a 2-D device simulation as proof of concept and propose architectures for the implementation of some basic quaternary logic gates.
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