期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 11, 页码 1561-1563出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2163615
关键词
Aluminum gallium nitride (AlGaN); backside illumination; extreme ultraviolet (EUV); flip chip; hybrid imager; high resolution; ultraviolet imaging
资金
- European Space Agency (ESA/ESTEC) [19947/06/NL/PM]
We report on the fabrication of extreme ultraviolet (EUV) hybrid imagers with backside-illuminated detector chip based on aluminum gallium nitride (AlGaN) layers grown on silicon and integrated with CMOS readout chip. The focal plane array (FPA) size is 256 x 256 pixels with 10-mu m pixel-to-pixel pitch. The devices were characterized at wavelengths from 300 down to 1 nm using synchrotron radiation. An upper cutoff wavelength of 280 nm was observed, as expected from the AlGaN active layer composition (40% Al). Thus, the imagers have a high rejection ratio of the near UV and visible radiation. Moreover, no degradation due to proton irradiation was observed for 60-MeV energy and 5.10(10) protons/cm(2) dose. Furthermore, devices with thin silicon substrate layer that is intentionally left were fabricated, and response only in the EUV range was observed. These results demonstrate the possibility of achieving high-resolution EUV imaging with AlGaN-based FPAs, which is very promising for high-end industrial, scientific, and space applications.
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