Ultralow-Voltage Transparent In2O3 Nanowire Electric-Double-Layer Transistors

Fully transparent In2O3 nanowire transistors gated by LiCl-incorporated SiO2-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 mu F/cm(2) at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 cm(2)/V . s, respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors.