Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this article, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) has been developed and investigated for toxic ammonia analyte at room temperature. The study reveals that this novel low-voltage OTFT device is capable of operating at -2 V and has shown a high sensitivity toward ammonia gas detection at RT.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this study, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) was developed for toxic ammonia analyte detection at room temperature. The OTFT sensor showed a high response rate of 47% at 5 ppm NH3 analyte and a low detection limit of 11.65 ppb. The developed sensor exhibited stable performance independent of relative humidity variations in the range of 30%-70%. The study demonstrates the capability of this novel low-voltage OTFT device to detect ammonia gas at room temperature.
IEEE SENSORS JOURNAL
(2023)
Article
Nanoscience & Nanotechnology
Samantha Brixi, Chase L. Radford, Mathieu N. Tousignant, Alexander J. Peltekoff, Joseph G. Manion, Timothy L. Kelly, Benoit H. Lessard
Summary: The development of printable active materials for wearable electronics is important for low voltage operation. Polymeric ionic liquid (PIL) block copolymers have shown promise as gating materials for organic thin-film transistors (OTFTs) due to their thickness-independent double-layer capacitance. In this study, the self-assembly of PILs on a semiconducting polymer was investigated, and the influence on OTFT performance was examined.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Yu-Fa Tu, Jen-Wei Huang, Ting-Chang Chang, Yang-Hao Hung, I-Nien Lu, Kuan-Ju Zhou, Li-Chuan Sun, Yu-An Chen, Chia-Chuan Wu, Wei-Chieh Hung, Jason Lee, Chen-Hsin Lien
Summary: This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. The degradation behaviors of the linear and saturated I-D-V-G transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Review
Engineering, Electrical & Electronic
Xin Ma, Hongquan Chen, Peiwen Zhang, Martin C. Hartel, Xiaona Cao, Sibel Emir Diltemiz, Qinglei Zhang, Javed Iqbal, Natan Roberto de Barros, Liyan Liu, Hao Liu
Summary: This paper describes the working principles of OTFT, including OFET and OECT, and compares the differences between them. It also discusses the potential for OTFT in biomarker sensing applications and improving patient outcomes.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Physical
Bochang Li, P. T. Lai, W. M. Tang
Summary: The channel length has an impact on the sensing performance of the hydrogen sensor based on OTFT, with smaller channel lengths resulting in lower carrier mobility. The compressive strain in the channel region increases with decreasing channel length, leading to a larger reduction in carrier mobility and higher sensitivity to hydrogen caused by hydrogen-induced expansion of the S/D electrodes. Furthermore, the response and recovery times of the sensor are mainly controlled by the diffusion of hydrogen atoms in the S/D electrodes, and are hardly affected by the channel length.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Polymer Science
Yusniza Yunus, Nurul Adlin Mahadzir, Mohamed Nainar Mohamed Ansari, Tg Hasnan Tg Abd Aziz, Atiqah Mohd Afdzaluddin, Hafeez Anwar, Mingqing Wang, Ahmad Ghadafi Ismail
Summary: This review provides an overview of different deposition methods for pentacene and its derivatives, including thermal evaporation and solution-processable methods. It offers recommendations for specific device applications based on film quality and device performance.
Article
Engineering, Electrical & Electronic
Joern Vahland, Karl Leo, Hans Kleemann
Summary: In this study, quasi-self-aligned organic thin-film transistors (OTFTs) were fabricated using wet-chemical etching to reduce parasitic overlap capacitances, leading to improved performance of the transistors. The self-aligned design resulted in a significant reduction of specific overlap capacitance and showed potential for high-frequency operation of organic transistors.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
S-J Wang, M. Sawatzki, H. Kleemann, I Lashkov, D. Wolf, A. Lubk, F. Talnack, S. Mannsfeld, Y. Krupskaya, B. Buechner, K. Leo
Summary: Rubrene single crystal domains with hundreds of micrometers size covering different substrates are achieved by thermal annealing and the assistance of a thin glassy underlayer, enabling high-performance rubrene crystalline transistors. The contact resistance of the transistors is significantly reduced through doping techniques, paving the way for novel high-performance organic electronics using crystalline active materials.
MATERIALS TODAY PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Yachen Li, Luis Portilla, Chaewon Kim
Summary: The intrinsic gain is a key metric in analog electronics, and research shows that it does not have much correlation with the mobility and contact resistance, but decreases as the channel length decreases, the gate voltage increases, and the thickness of the active layer decreases.
ELECTRONIC MATERIALS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Bochang Li, P. T. Lai, W. M. Tang
Summary: This study investigates the effects of source/drain catalytic metal and fabrication method on the characteristics of an organic thin-film transistor-based hydrogen sensor. The results show that Pd has the highest sensitivity, while Ni has the lowest sensitivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ankit Verma, Shipra Gupta, V. N. Mishra, Rajiv Prakash
Summary: This study focuses on the fabrication and characterization of a low-voltage, flexible organic thin film transistor (OTFT) for ammonia sensing. The device utilizes a hybrid dielectric layer and a polymer/2-D nanocomposite as the gate oxide and active layer respectively. The results show that the fabricated device has good electrical characteristics and can detect ammonia gas at low concentrations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Engineering, Multidisciplinary
Nur Syahadah Yusof, Mohamed Fauzi Packeer Mohamed, Nor Azlin Ghazali, Muhammad Firdaus Akbar Jalaludin Khan, Safizan Shaari, Mohd Nazim Mohtar
Summary: This review paper comprehensively examines the current status of solution processable organic thin film transistor (OTFT) technologies and discusses their applicability in biosensor applications. The paper identifies the unstable electrical performance of OTFT devices as a major obstacle to their commercialization.
ALEXANDRIA ENGINEERING JOURNAL
(2022)
Article
Chemistry, Multidisciplinary
Zeno Schumacher, Rasa Rejali, Megan Cowie, Andreas Spielhofer, Yoichi Miyahara, Peter Grutter
Summary: Inducing an inversion layer in organic semiconductors is a critical achievement for producing OFET devices, and a new pulsed bias technique is developed to characterize the dopant type of different organic material systems. This technique accurately identifies n-doping in pentacene/PTCDI heterostructure, demonstrating that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.
