期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 7, 页码 922-924出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2144954
关键词
Edge-dislocation density; InGaN solar cell; light absorption; patterned sapphire
资金
- National Science Council of Taiwan [NSC 99-2221-E-006-097-MY3, 100-3113-E-006-018-CC2]
In this letter, InGaN-based solar cells with a p-InGaN/i-InGaN/n-GaN double-heterojunction structure were fabricated and characterized. Two kinds of sapphire substrates [i.e., a conventional sapphire substrate (CSS) and a patterned sapphire substrate (PSS)] were used for epitaxial growth. Both the solar cells grown on the CSS and the PSS demonstrated a high open-circuit voltage of 2.05 and 2.08 V, respectively. However, the short-circuit current of the solar cells grown on the PSS showed an improvement of 27.6% compared with that of the cells grown on the CSS. Such observation could be attributed to low edge-dislocation density and the increase in the light-absorption path by the scattering of interface incident light between the substrate and the epitaxial layer for the solar cell grown on the PSS.
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