期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 10, 页码 1454-1456出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2162483
关键词
Organic thin-film transistor (OTFT); organic vapor-jet printing (OVJP); pentacene; printed electronics; reverse offset printing (ROP)
资金
- Information Display RD Center
- Ministry of Knowledge Economy in the Korean Government [F0004130-2008-31]
- MKE [2008-F052-01]
- National Research Foundation of Korea [2010-0023310]
- Korea Evaluation Institute of Industrial Technology (KEIT) [F0004120-2011-34, KI001909] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [F0004130-2008-31] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Public Safety & Security (MPSS), Republic of Korea [C1080-1101-0001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0023310] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 mu m are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.
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