期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 9, 页码 1008-1010出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2055530
关键词
Amorphous ZrON; charge-trapping layer; nitrogen-stabilized cubic ZrO2; nonvolatile memory
资金
- National Science Council of Taiwan [NSC 98-2221-E-007-119, NSC 98-2120-M-009-005]
A cubic ZrO2 film formed by annealing of amorphous ZrON has been investigated as the charge-trapping layer for nonvolatile memory. The memory with a nitrogen-stabilized cubic ZrO2 film shows promising performance in terms of 3.81-V hysteresis memory window by +/- 7-V program/erase voltage and 1.98-V flatband-voltage shift by programming at + 7 V for 10 ms. As compared to that with an amorphous ZrON film, the improved performance is due to the greatly enhanced kappa-value of 32.8 and the increased trapping sites provided by grain boundaries. Additionally, it shows 28.6% charge loss after ten-year operation at 85 degrees C. Although it is worse than that with an amorphous ZrON film, it is advantageous over an atomic-layer-deposition-grown tetragonal ZrO2 film in terms of reduced leakage current. Improved retention can be accomplished by passivation of grain boundaries and/or high-kappa double quantum barrier as the tunnel and blocking dielectric.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据