Article
Materials Science, Multidisciplinary
Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon
Summary: This study demonstrates the non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange. The modulation of channel conductance occurs through the exchange of oxygen ions between the indium-zinc oxide (IZO) channel and the oxygen-deficient HfO2-x gate oxide. The device shows nonvolatile retention properties and has potential for non-charge-storage-based nonvolatile memory application.
MATERIALS TODAY ADVANCES
(2022)
Article
Engineering, Electrical & Electronic
Jingdong Liu, Hua Xu, Min Li, Miao Xu, Junbiao Peng
Summary: This study investigates the enhanced negative-bias-illumination-temperature stress stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) with terbium (Tb) doping. The Tb-doped IZO TFTs show improved stability compared to the pristine device (AVth decreased from -4.1 to -0.6V after NBITS). Hall measurements, X-ray photoelectron spectroscopy, and microwave photoconductivity decay were used to analyze the effect of Tb doping on the characteristics of metal-oxide-semiconductor films. It is suggested that Tb-induced shallow defects act as recombination centers for capturing photo-generated electrons, complementing the trap-assisted model. The optimized Tb content is determined to be 3.21 at.%, with a mobility of 20.0 cm^2/V.s, ION/IOFF ratio of 10^9, and NBITS of -0.8V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Wanpeng Zhao, Ning Zhang, Xinyu Zhang, Chong Yao, Junfeng Zhang, Shurong Dong, Yang Liu, Zhi Ye, Jikui Luo
Summary: This study proposes and investigates a theory on the effects of oxygen vacancy related deep energy defects and valence band offset on the threshold voltage shift of ZnO thin film transistors under negative gate bias and illumination stress. The results show that ZnO thin film transistors with SiO2/Al2O3 gate oxide structures achieve a smaller threshold voltage shift, despite having more defects. This improvement in stability is attributed to a large valence band offset.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Wei-Sheng Liu, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, Hsing-Chun Kuo
Summary: In this research, Ar/O-2 plasma treatment was utilized to modify IGZO thin films, aiming to reduce oxygen vacancy density and enhance carrier mobility. By adjusting the O-2 ratio in the plasma treatment and subsequent thermal annealing, significant improvements in TFT performance were achieved, indicating the potential of plasma-treated IGZO TFTs for next-generation flat-panel displays.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Heesung Kong, Kyoungah Cho, Hosang Lee, Seungjun Lee, Junhyung Lim, Sangsig Kim
Summary: This study investigated the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The results showed that the TFT with HfO2 was more vulnerable to positive bias stress, while the TFT with HfAlO exhibited better stability.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Hyeon Joo Seul, Jae Hoon Cho, Jae Seok Hur, Min Hoe Cho, Min Hee Cho, Min Tae Ryu, Jae Kyeong Jeong
Summary: This paper reports the performance improvement of heterojunction channel field-effect transistor using an atomic-layer-deposited InGaZnO (IGZO) channel. By engineering the band-gap through cation composition and thickness modulation, the transistor achieved enhanced mobility and gate bias stability.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Biochemistry & Molecular Biology
Wei-Sheng Liu, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, Hsing-Chun Kuo
Summary: In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). The research found that increasing the O-2 ratio in the argon-oxygen plasma treatment mixture reduced surface roughness and improved thin-film resistivity and carrier Hall mobility. X-ray photoelectron spectroscopy measurements confirmed the decrease in carrier concentration due to the oxygen vacancy density reduction. The DG IGZO TFT devices showed enhanced characteristics after RTA, with improved field-effect mobility, subthreshold swing, and I-ON/I-OFF current ratio.
Article
Engineering, Electrical & Electronic
Le Weng, Shuo Zhang, Dan Kuang, Bin Liu, Xianwen Liu, Baiqi Jiang, Guangchen Zhang, Zongchi Bao, Ce Ning, Dawei Shi, Jian Guo, Guangcai Yuan, Zhinong Yu
Summary: This study presents a dual active layer structure of indium-zinc oxide (InZnO) and indiummagnesium-zinc oxide (InMgZnO) fabricated using a simple solution process. By utilizing a heterojunction structure and optimizing the front channel thickness, as well as treating the heterojunction interface with oxygen plasma, the researchers achieved thin-film transistor (TFT) devices with enhanced performance and greater stability. The high electrical performance and stability of the heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment and the electron redistribution occurring at the heterojunction interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yu-Fa Tu, Cheng-Ling Chiang, Ting-Chang Chang, Yang-Hao Hung, Li-Chuan Sun, Chuan-Wei Kuo, Hong-Yi Tu, Hui-Chun Huang, Chen-Hsin Lien
Summary: This study investigates the influence of different passivation layers on amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under positive bias stress (PBS) in a moist environment and hot-carrier stress (HCS). It is found that the Al2O3-passivated device effectively suppresses water absorption but has inferior HCS reliability. This degradation behavior is attributed to the high permittivity of Al2O3 and the diffusion of oxygen from the etch stop layer (ESL), which results in the generation of oxygen vacancies in the Al2O3 film.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Wanpeng Zhao, Ning Zhang, Chong Yao, Junfeng Zhang, Tianfeng Huang, Yang Liu, Shurong Dong, Zhi Ye, Jikui Luo
Summary: A new method is proposed to improve the stability performance of zinc oxide (ZnO) thin-film transistors (TFTs) by reducing density of oxygen vacancies and enlarging valance band offset (VBO) between channel/insulator simultaneously. The stability is improved by using ozone (O-3) as oxidant during the atomic layer deposition (ALD) of ZnO to reduce its oxygen vacancies and replacing Al2O3 layer by SiO2 to obtain larger VBO. The combination of O-3 ALD ZnO and SiAlOX dielectric leads to high saturation mobility, negligible hysteresis window, and excellent stability under various stresses, especially under NBIS.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Instruments & Instrumentation
Ran Bi, Yadan Li, Yihao Wu, Chuantao Zheng, Dingdi Wang
Summary: To facilitate radiative cooling in optoelectronic devices, the use of infrared transparent conductive films (TCFs) is necessary. We have produced hafnium-doped indium oxide (InHfO) TCFs that have a wide transparency range from 400 nm to 20 & mu;m. By replacing commercial ITO TCFs with InHfO TCFs, we successfully decreased the operating temperature of an enclosed resistor, potentially opening up new avenues for optoelectronic applications.
INFRARED PHYSICS & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Y. B. Li, T. P. Chen
Summary: Transparent IGZO TFT with ITO/Ti S/D contacts achieved enhanced performance and reliability, making it very promising for transparent display applications.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Multidisciplinary
Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng
Summary: In this study, IZTO TFT pixel array with hafnium-aluminum oxide dielectric was fabricated using a solution process, and the electrical characteristics were improved by N2O plasma treatment, leading to decreased subthreshold swing and increased saturation mobility. X-ray photoelectron spectrum analysis confirmed that interface states may have been passivated by reactive O radicals. Additionally, the stability of NBIS was significantly enhanced by the plasma treatment.
ACTA PHYSICA SINICA
(2022)
Article
Engineering, Electrical & Electronic
Zhiyu Lin, Jinxiu Zhao, Xiuyan Li, Lu Kang, Junkang Li, Ying Wu, Jeffrey Xu, Mengwei Si
Summary: The positive bias temperature instability (PBTI) degradation of ZnO transistors by atomic layer deposition (ALD) is investigated using an extended measure-stress-measure (eMSM) technique. The anomalous negative threshold voltage (V-TH) shift under PBTI stress, commonly observed in oxide semiconductor transistors, is found to be well described by a universal relaxation model. The study extracts the permanent component (P) and recoverable component (R), demonstrating that the R component is dominant in the negative V-TH shift while the P component is positive. The universality of PBTI relaxation suggests the importance of hydrogen (H) transport in understanding PBTI degradation in oxide semiconductor devices, and the need to consider relaxation for accurate lifetime evaluation.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yu Li, Xiaoqing Huang, Congwei Liao, Runsheng Wang, Shengdong Zhang, Lining Zhang, Ru Huang
Summary: This paper proposes a dynamic current hysteresis model for IGZO-TFT, which accurately describes the capture/emission behavior of interface traps and incorporates the effects of trap density, trap energy level, and scan rate.
SOLID-STATE ELECTRONICS
(2022)
Article
Multidisciplinary Sciences
Yong Churl Kim, Kwang Hee Kim, Dae-Yong Son, Dong-Nyuk Jeong, Ja-Young Seo, Yeong Suk Choi, In Taek Han, Sang Yoon Lee, Nam-Gyu Park
Article
Materials Science, Multidisciplinary
Ryu-ichi Satoh, Takkyun Ro, Chul-Joon Heo, Gae Hwang Lee, Wenxu Xianyu, Yongyoung Park, Jongbong Park, Seon-Jeong Lim, Dong-Seok Leem, Xavier Bulliard, Yeonhee Kim, Kideok Bae, Woo-Yong Yang, Kyung-Bae Park, Yong Wan Jin, Sangyoon Lee
ORGANIC ELECTRONICS
(2017)
Article
Chemistry, Multidisciplinary
Eunkyung Lee, Jiyoung Jung, Ajeong Choi, Xavier Bulliard, Jung-Hwa Kim, Youngjun Yun, Jooyoung Kim, Jeongil Park, Sangyoon Lee, Youngjong Kang
Article
Nanoscience & Nanotechnology
Eun-Kyung Lee, Moo Yeol Lee, Ajeong Choi, Joo-Young Kim, O. Young Kweon, Jung-Hwa Kim, Ji Young Jung, Tae-Joo Shin, Joon Hak Oh, Jeong-Il Park, Sang Yoon Lee
ADVANCED ELECTRONIC MATERIALS
(2017)
Article
Chemistry, Multidisciplinary
Soo-Ghang Ihn, Namheon Lee, Soon Ok Jeon, Myungsun Sim, Hosuk Kang, Yongsik Jung, Dal Ho Huh, Young Mok Son, Sae Youn Lee, Masaki Numata, Hiroshi Miyazaki, Rafael Gomez-Bombarelli, Jorge Aguilera-Iparraguirre, Timothy Hirzel, Alan Aspuru-Guzik, Sunghan Kim, Sangyoon Lee
Article
Physics, Applied
Sang Hoon Lee, Dong Geun Lee, Hoeryong Jung, Sangyoon Lee
JAPANESE JOURNAL OF APPLIED PHYSICS
(2018)
Article
Physics, Applied
Sang Hoon Lee, Hwiwon Seo, Sangyoon Lee
JAPANESE JOURNAL OF APPLIED PHYSICS
(2018)
Article
Materials Science, Multidisciplinary
Sang Hoon Lee, Sangyoon Lee
ORGANIC ELECTRONICS
(2018)
Article
Polymer Science
Sang Hoon Lee, Sangyoon Lee
Article
Engineering, Mechanical
Hwiwon Seo, Sangyoon Lee
JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY
(2019)
Article
Chemistry, Analytical
Sang Hoon Lee, Sangyoon Lee
Article
Nanoscience & Nanotechnology
Sang Hoon Lee, Sangyoon Lee
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Green & Sustainable Science & Technology
Sang Hoon Lee, Sangyoon Lee
Summary: This study presents the design of a comb-structured air-gap acceleration sensor and the materials and processes for highly productive roll-to-roll printed electronic fabrication of the sensor. The sensor is designed with multiple layers in two parts, processed separately on different flexible PET substrates, and then transferred and bonded to form an air-gap structure. Electrical characteristics of the sensor are provided by testing capacitance change as a function of acceleration.
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING-GREEN TECHNOLOGY
(2022)
Proceedings Paper
Automation & Control Systems
Sangyoon Lee, Perry Y. Li
PROCEEDINGS OF THE BATH/ASME SYMPOSIUM ON FLUID POWER AND MOTION CONTROL, 2018
(2018)
Proceedings Paper
Computer Science, Artificial Intelligence
Hwiwon Seo, Sangyoon Lee
2017 14TH INTERNATIONAL CONFERENCE ON UBIQUITOUS ROBOTS AND AMBIENT INTELLIGENCE (URAI)
(2017)
