Organic-Transistor-Based Nano-Floating-Gate Memory Devices Having Multistack Charge-Trapping Layers

标题
Organic-Transistor-Based Nano-Floating-Gate Memory Devices Having Multistack Charge-Trapping Layers
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 5, Pages 503-505
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-03-17
DOI
10.1109/led.2010.2041743

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