期刊
IEEE ELECTRON DEVICE LETTERS
卷 31, 期 9, 页码 990-992出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2010.2055825
关键词
AlGaN/GaN; dual-gate; enhancement-mode (E-mode); high-electron-mobility transistor (HEMT); power electronics
资金
- MIT Energy Initiative
- Department of Energy
In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate controlling the threshold voltage and a long gate supporting the high-voltage drop from the drain. Using this new dual-gate technology, AlGaN/GaN E-mode transistors grown on a Si substrate have demonstrated a high threshold voltage of 2.9 V with a maximum drain current of 434 mA/mm and a specific on-resistance of 4.3 m Omega . cm(2) at a breakdown voltage of 643 V.
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