High-Performance $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ -Channel MOSFETs With High-$\kappa$ Gate Dielectrics and $\alpha$-Si Passivation

出版年份 2008 全文链接

标题

作者

关键词

出版物

Volume 30, Issue 1, Pages 5-7

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-12-25

DOI

10.1109/led.2008.2008827

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