Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

出版年份 2009 全文链接

标题

作者

关键词

出版物

Volume 30, Issue 6, Pages 605-607

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2009-05-27

DOI

10.1109/led.2009.2020183

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