Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

标题
Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 9, Pages 981-983
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2009-08-12
DOI
10.1109/led.2009.2026296

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