Article
Chemistry, Analytical
Seong-Chel Park, Kwan-Ho Park, Joon-Hyuk Chang
Summary: The proposed deep-learning algorithm directly compensates for luminance degradation caused by OLED device deterioration to alleviate the burn-in phenomenon on OLED displays. By utilizing deep-feature generation and multistream self-attention, the algorithm identifies the importance of variables and correlations between burn-in-related variables. Through a deep neural network, it estimates luminance degradation and successfully compensates for it within a 4.56% error range, showing the potential to mitigate burn-in phenomenon by compensating for pixel-level luminance deviation.
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Yao-Jen Lee, Ju-Heng Lin, Pin-Hua Wu, Jui-Che Chang, Cheng-Lun Yen, Hsin-Chun Tseng, Hsu-Tang Liao, Yu-Wen Chou, Min-Yu Chiu, Yan-Qing Chen
Summary: This work demonstrates the construction of nonvolatile memory based on tunnel thin-film transistors and a ferroelectric HfZrOx layer. The memory exhibits sufficient electrical performance and can be integrated with smart wearable devices for edge computing applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Min Kyu Chang, Ji Hoon Kim, Hyoungsik Nam
Summary: AMOLED displays use compensation techniques to address luminance non-uniformity issues caused by variations in thin-film transistors' electrical characteristics. A proposed electromagnetic pulse generation circuit can generate pulse widths of any multiple of the line time by changing the phase of additional clock signals. This circuit reduces power consumption and eliminates coupling noises on the output pulses.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Peng Zhang, Emmanuel Jacques, Regis Rogel, Laurent Pichon, Olivier Bonnaud
Summary: This article proposes a thin film transistor (TFT) device incorporating a buried electrode, which can increase driving current by reducing channel length and maintaining mobility, as well as suppress the Schottky barrier at source/drain contacts to improve on/off current ratio. However, further optimization is needed to reduce off-current due to weakened electric field at source/drain sides.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Jongsu Oh, Jin-Ho Kim, Jungwoo Lee, Eun Kyo Jung, Donggun Oh, Jongsul Min, Hwarim Im, Yong-Sang Kim
Summary: The study introduces a novel low-temperature polycrystalline silicon thin-film transistor pixel circuit for PWM-based mu LED displays. It achieves 10-bit gray levels without wavelength shift and compensates for V-TH variations, offering a solution to color distortions in mu LED displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Hong-Yi Tu, Ting-Chang Chang, Yu-Ching Tsao, Mao-Chou Tai, Yu-Zhe Zheng, Yu-Fa Tu, Chuan-Wei Kuo, Chia-Chuan Wu, Yu-Lin Tsai, Tsung-Ming Tsai, Chih-Chih Lin, Ya-Ting Chien
Summary: This study investigates the abnormal degradation of low-temperature polycrystalline-silicon thin-film transistors on a polyimide flexible substrate after hot carrier stress. The degradation mechanism is divided into two stages, with the first stage causing an increase in capacitance and transconductance, and a positive shift in threshold voltage. The second stage is characterized by a negative shift in threshold voltage and a decrease in transconductance, attributed to negative bias temperature instability induced by Joule heating.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Seong Ji Lee, Chan-mo Kang, Jin-Wook Shin, Dae Hyun Ahn, Chul Woong Joo, Hyunsu Cho, Nam Sung Cho, Hyoc Min Youn, Young Jae An, Jin Sun Kim, Jonghee Lee, Hyunkoo Lee
Summary: In this study, a high-luminance, low-voltage, three-wavelength top-emitting white OLED was developed for full-color microdisplay applications. Red, green, and blue color filters were deposited onto the OLED to enhance color gamut. The developed device exhibited high luminance and color gamut, demonstrating promising potential for OLED microdisplay technology.
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
(2022)
Article
Engineering, Electrical & Electronic
Bo Yu, Carlos A. Favela, Sicong Sun, Sahil Sharma, Chuanze Zhang, Tanguy Terlier, Jinghong Chen, Venkat Selvamanickam
Summary: This article presents the performance of flexible high-temperature polycrystalline silicon thin-film transistors fabricated on metal foils, demonstrating high saturation mobility and mechanical robustness after bending cycles. Technologycomputer-aided design simulations reveal the impact of parasitic resistance and defect density on device performance under different doping temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Hing-Mo Lam, Hezi Qiu, Chenglin Li, Jinyuan Wen, Wenlong Bai, Congwei Liao, Min Zhang, Hailong Jiao, Shengdong Zhang
Summary: The externally compensated display system has been proven to have greater potential in solving aging and uniformity issues in the AMOLED display system compared to the internally compensated display system. However, the traditional compensation method is time-consuming and slow to respond to TFT mobility changes. The proposed fast progressive compensation method reduces compensation time by approximately 14 times compared to the traditional method by calibrating a row of pixel circuits K rows ahead during the display data updating period.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Chemistry, Multidisciplinary
Hiroyuki Yamada, Junpei Watanabe, Kazuhiro Nemoto, Hong-Tao Sun, Naoto Shirahata
Summary: Despite bulk crystals of silicon being indirect bandgap semiconductors, the quantum dots derived from silicon exhibit superior photoluminescence properties. The use of SiQDs as an emissive layer in current-driven LEDs allows for strong electroluminescence. The external quantum efficiency of Si-QLEDs was enhanced through postproduction effect.
Article
Nanoscience & Nanotechnology
Huilian Hao, Yue Zhao, Tianliang Song, Xu Wang, Changwang Li, Wenyao Li, Wenzhong Shen
Summary: In this study, enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode was reported. The c-Si NCs were synthesized by facile femtosecond laser ablation. Both photoluminescence and electroluminescence were found to arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency obtained were 0.79 mW cm(-2) and around 6.6%, respectively, indicating the potential of Si NCs as an attractive optical source for future integrated chips.
Article
Engineering, Electrical & Electronic
Kyeongmin Park, Seunghun Oh, Dongjin Choi, Kyeonghan Shin, Haewan Cho, Franklin Bien
Summary: This paper presents an external compensation system for QHD+ mobile AMOLED displays, which measures OLED currents to calculate TFTs' threshold voltage and employs a differential sensing scheme and digital correlated double sampling for accuracy improvement. Additionally, an error correction algorithm is proposed to compensate for modeling errors.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
Article
Engineering, Electrical & Electronic
Nairi Liang, Dongli Zhang, Mingxiang Wang, Huaisheng Wang, Yining Yu, Dongyu Qi
Summary: Research has shown that under positive bias stress (PBS), the transfer characteristic curve of polycrystalline silicon thin-film transistors (TFTs) shifts towards the negative gate bias direction, with a recoverable degradation process that initially proceeds at a fast rate before slowing down. Further acceleration of recovery can be achieved at higher temperatures or by applying a negative gate bias. The proposed degradation mechanism involves the generation of protons in the gate oxide and their accumulation at the channel/gate oxide interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Applied
Baeksang Sung, Seonjeong Lee, Chul Woong Joo, Dasol Kim, Jonghee Lee, Yun-Hi Kim
Summary: A novel thermally stable host material, Si-IDCz, has been reported for blue phosphorescent organic light-emitting diodes. Si-IDCz exhibits a high glass transition temperature and a rigid silicon core, which contribute to its high performance and stability.
Article
Engineering, Electrical & Electronic
Bing Zhang, Dongli Zhang, Mingxiang Wang, Huaisheng Wang, Rongxin Wang
Summary: This study investigates the degradation effects of different trap states on polycrystalline silicon thin-film transistors under alternating current gate pulse bias stress. It found that the decrease of ON-state current is the dominant degradation phenomenon, while acceptor-like trap states do not contribute to the degradation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
