期刊
IEEE ELECTRON DEVICE LETTERS
卷 30, 期 1, 页码 45-47出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2008.2009010
关键词
Amorphous silicon; circuit; organic; threshold voltage (VT)
Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice versa.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据