Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack

出版年份 2008 全文链接

标题

作者

关键词

出版物

Volume 29, Issue 6, Pages 557-560

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-05-21

DOI

10.1109/led.2008.922031

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