SONOS-Type Flash Memory Cell With Metal$/\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{SiN}/\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Si}$ Structure for Low-Voltage High-Speed Program/Erase Operation

出版年份 2008 全文链接

标题

作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 29, Issue 5, Pages 512-514

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-04-29

DOI

10.1109/led.2008.920979

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IEEE ELECTRON DEVICE LETTERS

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