Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

(2022) Suraj S. Cheema et al.   NATURE

The fundamentals and applications of ferroelectric HfO2

(2022) Uwe Schroeder et al.   Nature Reviews Materials

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

(2021) Binjian Zeng et al.   ADVANCED FUNCTIONAL MATERIALS

Low-power electronic technologies for harsh radiation environments

(2021) Jeffrey Prinzie et al.   Nature Electronics

Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

(2021) Chen Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

(2021) Chen Liu et al.   Journal of Materiomics

Reconfigurable frequency multiplication with a ferroelectric transistor

(2020) Halid Mulaosmanovic et al.   Nature Electronics

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors

(2019) Qi Sun et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory

(2017) Fei Huang et al.   IEEE ELECTRON DEVICE LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

(2016) Shaoan Yan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

(2016) Steven J. Brewer et al.   JOURNAL OF APPLIED PHYSICS

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

(2015) S. A. Yan et al.   APPLIED PHYSICS LETTERS

Ionizing radiation effect on metal–ferroelectric–insulator–semiconductor memory capacitors

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Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

(2014) S. A. Yan et al.   JOURNAL OF APPLIED PHYSICS

Overview of emerging nonvolatile memory technologies

(2014) Jagan Meena et al.   Nanoscale Research Letters

Radiation Effects in Flash Memories

(2013) S. Gerardin et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Effects of electron irradiation on the ferroelectric 180° in-plane nanostripe domain structure in a thin film prepared from a bulk single crystal of BaTiO3 by focused ion beam

(2011) Takao Matsumoto et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Field Effect Transistors for Memory Applications

(2010) Jason Hoffman et al.   ADVANCED MATERIALS

Radiation Effects in MOS Oxides

(2008) James R. Schwank et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE