Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Title
Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2021-05-20
DOI
10.1088/1361-6528/ac02e7

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