Journal
NANO ENERGY
Volume 67, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2019.104236
Keywords
Semipolar GaN; Light-emitting diodes; Atom probe tomography; Polarization; Visible light communication
Categories
Funding
- UCSB-Collaborative Research in Engineering, Science and Technology (CREST) Malaysia project
- Solid State Lighting and Energy Center at UCSB
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We demonstrate efficient, polarized and monolithic white semipolar (20-21) InGaN light-emitting diodes (LEDs) grown on high crystal quality 4-inch (20-21) GaN/sapphire template. Materials growth by metal-organic chemical vapor deposition (MOCVD) and characterization by atom probe tomography (APT) were carried out. The fabricated regular 0.1 mm(2) size LEDs show a high electrical performance with an output power of 3.9 mW at 100 mA, an emission spectrum with two peaks located at 445 nm and 565 nm, a CIE point of (0.37, 0.42) and a polarization ratio of 0.30, which make them promising candidates for backlighting in liquid crystal displays (LCDs) application. Moreover, the fabricated square phosphor-free white mu LED with size ranging from 20 to 60 mu m, exhibit a high 3 dB modulation bandwidth of 660 MHz in the visible light communication (VLC) system, which benefits from the shorter carrier lifetime grown on the semipolar (20-21) plane. To our best knowledge, this is the first demonstration of monolithic white semipolar mu LEDs in the VLC application, which can overcome the limitation of the slow frequency response of yellow phosphors converted commercial white LEDs. These results demonstrate the huge potentials to produce high efficiency monolithic white semipolar InGaN LEDs on cost-effective large area sapphire substrates.
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