4.8 Article

Enhanced Rate of Radiative Decay in CdSe Quantum Dots upon Adsorption of an Exciton-Delocalizing Ligand

Journal

NANO LETTERS
Volume 14, Issue 9, Pages 5323-5328

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nl5023699

Keywords

Cdse quantum dot; exciton delocalization; dithiocarbamate; oscillator strength radiative decay

Funding

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences, through the Early Career Research Award [DE-SC0003998]
  2. U.S. Department of Energy (DOE) [DE-SC0003998] Funding Source: U.S. Department of Energy (DOE)

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This paper describes the enhancement of the quantum yield of photoluminescence (PL) of CdSe quantum dots (QDs) upon the adsorption of an exciton-delocalizing ligand, phenyldithiocarbamate. Increasing the apparent excitonic radius by only 10% increases the value of the radiative rate constant by a factor of 1.8 and the PL quantum yield by a factor of 2.4. Ligand exchange therefore simultaneously perturbs the confinement energy of charge carriers and enhances the probability of band-edge transitions.

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